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STMicroelectronics BUL58D BJTs - Bipolar Transistors Hi Vltg Fast Swtchng NPN Pwr Transistor

Name: STMicroelectronics BUL58D BJTs - Bipolar Transistors Hi Vltg Fast Swtchng NPN Pwr Transistor
Brand: STMicroelectronics

ModelBUL58D

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Technology: Si

Unit Weight: 2.300 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 85 W

Emitter- Base Voltage VEBO: 9 V

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 5

Collector- Emitter Voltage VCEO Max: 450 V

Collector-Emitter Saturation Voltage: 2 V