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Gain: 16.5 dB
Width: 9.4 mm
Height: 3.5 mm
Length: 7.5 mm
Technology: Si
Unit Weight: 3 g
Channel Mode: Enhancement
Output Power: 18 W
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Moisture Sensitive: Yes
Operating Frequency: 1 GHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 31.7 W
Vgs - Gate-Source Voltage: + 20 V
Id - Continuous Drain Current: 2.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Forward Transconductance - Min: 1 S
Rds On - Drain-Source Resistance: 760 mOhms
Vds - Drain-Source Breakdown Voltage: 65 V
