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Gain: 21.3 dB
Width: 12.83 mm
Height: 7.11 mm
Length: 24.89 mm
Technology: Si
Channel Mode: Enhancement
Output Power: 175 W
Configuration: Single
Mounting Style: SMD/SMT
Operating Frequency: 150 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 389 W
Vgs - Gate-Source Voltage: + 20 V
Id - Continuous Drain Current: 10 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Vds - Drain-Source Breakdown Voltage: 250 V
