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Gain: 13 dB
Width: 6.1 mm
Height: 4.45 mm
Length: 20.57 mm
Technology: Si
Unit Weight: 3 g
Channel Mode: Enhancement
Output Power: 30 W
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Operating Frequency: 1 GHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 74 W
Vgs - Gate-Source Voltage: + 20 V
Id - Continuous Drain Current: 4 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Forward Transconductance - Min: 1.8 S
Vds - Drain-Source Breakdown Voltage: 65 V
