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Technology: Si
Unit Weight: 5.200 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 62 W
DC Current Gain hFE Max: 28
Emitter- Base Voltage VEBO: 9 V
Continuous Collector Current: 12 A
Maximum DC Collector Current: 12 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 5.5
Collector- Emitter Voltage VCEO Max: 750 V
Collector-Emitter Saturation Voltage: 2 V
