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STMicroelectronics ST24180 RF Power MOSFET 180 W, 32 V, 2.3 to 2.5 GHz RF Power LDMOS transistor

Name: STMicroelectronics ST24180 RF Power MOSFET 180 W, 32 V, 2.3 to 2.5 GHz RF Power LDMOS transistor
Brand: STMicroelectronics

ModelST24180

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Gain: 15.3 dB

Technology: Si

Output Power: 180 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Operating Frequency: 2.35 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 6 V, + 10 V

Maximum Operating Temperature: + 200 C

Vds - Drain-Source Breakdown Voltage: 65 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V