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Width: 6.2 mm
Height: 2.4 mm
Length: 6.6 mm
Fall Time: 32 ns
Rise Time: 7.5 ns
Technology: Si
Unit Weight: 330 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel Power MOSFET
Qg - Gate Charge: 18 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 90 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 15 ns
Typical Turn-Off Delay Time: 39 ns
Id - Continuous Drain Current: 2.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 2.4 S
Rds On - Drain-Source Resistance: 6 Ohms
Vds - Drain-Source Breakdown Voltage: 1 kV
Vgs th - Gate-Source Threshold Voltage: 3 V
