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Technology: Si
Unit Weight: 2 g
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 30 W
Id - Continuous Drain Current: 13.9 A
Rds On - Drain-Source Resistance: 148 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
