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Technology: Si
Unit Weight: 2.320 g
Channel Mode: Enhancement
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Qg - Gate Charge: 52.6 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 320 W
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Id - Continuous Drain Current: 37 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 97 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 4.75 V
