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Fall Time: 2.8 ns
Rise Time: 22 ns
Technology: Si
Unit Weight: 76 mg
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 4.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 60 W
Vgs - Gate-Source Voltage: - 22 V, + 22 V
Id - Continuous Drain Current: 40 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 16 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
