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Width: 5 mm
Height: 1.5 mm
Length: 6 mm
Fall Time: 2.3 ns, 21 ns
Rise Time: 21 ns, 23 ns
Technology: Si
Unit Weight: 170 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Development Kit: CSD86350Q5DEVM-604, TPS53219EVM-690
Transistor Type: 2 N-Channel
Qg - Gate Charge: 10.7 nC, 25 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 13 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 8 ns, 9 ns
Typical Turn-Off Delay Time: 9 ns, 24 ns
Id - Continuous Drain Current: 40 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 103 S, 132 S
Rds On - Drain-Source Resistance: 5 mOhms, 1.1 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 900 mV
