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Fall Time: 2.3 us
Rise Time: 1.3 us
Technology: Si
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 25 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.4 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 1 us
Typical Turn-Off Delay Time: 5.3 us
Id - Continuous Drain Current: 13.5 A
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 1.4 V
