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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 2.5 W
Gain Bandwidth Product fT: 110 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 300 V
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 300 V
Collector-Emitter Saturation Voltage: 250 mV
