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Fall Time: 17 ns, 20 ns
Rise Time: 21 ns, 22 ns
Technology: Si
Unit Weight: 7.500 mg
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 N-Channel
Qg - Gate Charge: 930 pC, 1 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.5 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 3 ns, 2 ns
Typical Turn-Off Delay Time: 20 ns, 28 ns
Id - Continuous Drain Current: 850 mA
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 2.6 S, 1.5 S
Rds On - Drain-Source Resistance: 150 mOhms, 500 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 450 mV, 1.5 V
