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Width: 5 mm
Height: 3.37 mm
Length: 6.29 mm
Fall Time: 41 ns
Rise Time: 110 ns
Technology: Si
Unit Weight: 894.062 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 18 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.3 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 11 ns
Typical Turn-Off Delay Time: 23 ns
Id - Continuous Drain Current: 2.5 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3.7 S
Rds On - Drain-Source Resistance: 100 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1 V
