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Fall Time: 6 ns
Rise Time: 6 ns
Technology: Si
Unit Weight: 506.600 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Mounting Style: SMD/SMT
Transistor Type: TrenchFET Power MOSFET
Qg - Gate Charge: 83 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 48 W
Vgs - Gate-Source Voltage: - 16 V, + 20 V
Typical Turn-On Delay Time: 15 ns
Typical Turn-Off Delay Time: 39 ns
Id - Continuous Drain Current: 201 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 155 S
Rds On - Drain-Source Resistance: 740 uOhms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 2.2 V
