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Fall Time: 23 ns
Rise Time: 120 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 90 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 240 W
Vgs - Gate-Source Voltage: - 16 V, + 20 V
Typical Turn-On Delay Time: 100 ns
Typical Turn-Off Delay Time: 65 ns
Id - Continuous Drain Current: 440 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 265 S
Rds On - Drain-Source Resistance: 690 uOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 2.3 V
