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Width: 0.6 mm
Height: 0.4 mm
Length: 0.8 mm
Technology: Si
Unit Weight: 299.212 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 710 pC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.25 W
Vgs - Gate-Source Voltage: - 5 V, + 5 V
Id - Continuous Drain Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 340 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 350 mV
