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Fall Time: 5 ns
Rise Time: 6 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: TrenchFET Gen IV Power MOSFET
Qg - Gate Charge: 8.4 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 16.7 W
Vgs - Gate-Source Voltage: - 16 V, + 20 V
Typical Turn-On Delay Time: 8 ns
Typical Turn-Off Delay Time: 18 ns
Id - Continuous Drain Current: 32.9 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 30 S
Rds On - Drain-Source Resistance: 9.65 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.4 V
