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Fall Time: 5 ns, 10 ns
Rise Time: 5 ns, 30 ns
Technology: Si
Unit Weight: 337.318 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: TrenchFET Gen IV Power MOSFET
Qg - Gate Charge: 25 nC, 81 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 38 W, 83 W
Vgs - Gate-Source Voltage: - 16 V, + 20 V
Typical Turn-On Delay Time: 12 ns, 20 ns
Typical Turn-Off Delay Time: 22 ns, 40 ns
Id - Continuous Drain Current: 105 A, 257 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 93 S, 170 S
Rds On - Drain-Source Resistance: 680 uOhms, 2.1 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.2 V
