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Fall Time: 10 ns, 15 ns
Rise Time: 50 ns, 61 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 19 nC, 51 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 26.6 W, 60 W
Vgs - Gate-Source Voltage: - 16 V, + 20 V, - 12 V, + 16 V
Typical Turn-On Delay Time: 19 ns, 28 ns
Typical Turn-Off Delay Time: 20 ns, 37 ns
Id - Continuous Drain Current: 73 A, 158 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 1.4 mOhms, 3.3 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.2 V
