Vishay Siliconix SQ4153EY-T1_GE3 MOSFETs P Ch -12Vds 8Vgs AEC-Q101 Qualified

Fall Time: 283 ns

Rise Time: 168 ns

Technology: Si

Unit Weight: 750 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 101 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 7.1 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 31 ns

Typical Turn-Off Delay Time: 310 ns

Id - Continuous Drain Current: 25 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 5.1 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 900 mV