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Fall Time: 5 ns
Rise Time: 5 ns, 27 ns
Technology: Si
Unit Weight: 506.600 mg
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Qg - Gate Charge: 20 nC, 50 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 27 W, 48 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 10 ns, 17 ns
Typical Turn-Off Delay Time: 22 ns, 34 ns
Id - Continuous Drain Current: 20 A, 60 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 38 S, 66 S
Rds On - Drain-Source Resistance: 3 mOhms, 8.3 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 500 mV
