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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 140 W
DC Current Gain hFE Max: 100 at 1 A, 5 V
Gain Bandwidth Product fT: 30 MHz
Emitter- Base Voltage VEBO: 4 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 10 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 10 at 1 A, 5 V
Collector- Emitter Voltage VCEO Max: 35 V
