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Gain: 12.2 dB
Technology: GaAs
Unit Weight: 4.528 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: pHEMT
NF - Noise Figure: 0.42 dB
Operating Frequency: 12 GHz
Pd - Power Dissipation: 125 mW
Gate-Source Cutoff Voltage: - 750 mV
Id - Continuous Drain Current: 10 mA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 54 mS
Vgs - Gate-Source Breakdown Voltage: - 3 V
Vds - Drain-Source Breakdown Voltage: 4 V
