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Central Semiconductor 2N1700 TIN/LEAD BJTs - Bipolar Transistors NPN 60Vcbo 40Vceo 6.0Vebo 100mA 4.0V

Name: Central Semiconductor 2N1700 TIN/LEAD BJTs - Bipolar Transistors NPN 60Vcbo 40Vceo 6.0Vebo 100mA 4.0V
Brand: Central Semiconductor

Model2N1700 TIN/LEAD

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 80

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 1 V