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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 360 mW
DC Current Gain hFE Max: 120 at 10 mA, 1 V
Gain Bandwidth Product fT: 500 MHz
Emitter- Base Voltage VEBO: 4.5 V
Collector- Base Voltage VCBO: 40 V
Continuous Collector Current: 200 mA
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 40 at 10 mA, 1 V
Collector- Emitter Voltage VCEO Max: 15 V
Collector-Emitter Saturation Voltage: 200 mV
