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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
DC Current Gain hFE Max: 250 at 0.3 V, 50 mA
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 18 V
Continuous Collector Current: 50 mA
DC Collector/Base Gain hfe Min: 75 at 0.3 V, 50 mA
Collector-Emitter Saturation Voltage: 1.2 V
