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Central Semiconductor 2N3860 TIN/LEAD BJTs - Bipolar Transistors NPN 30Vcbo 30Vceo 4.0Vebo 4.0pF

Name: Central Semiconductor 2N3860 TIN/LEAD BJTs - Bipolar Transistors NPN 30Vcbo 30Vceo 4.0Vebo 4.0pF
Brand: Central Semiconductor

Model2N3860 TIN/LEAD

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 90 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 30 V

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 125 mV