Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts

Central Semiconductor 2N3904 TIN/LEAD BJTs - Bipolar Transistors NPN 60Vcbo 40Vceo 6.0Vebo 200mA 625mW

Name: Central Semiconductor 2N3904 TIN/LEAD BJTs - Bipolar Transistors NPN 60Vcbo 40Vceo 6.0Vebo 200mA 625mW
Brand: Central Semiconductor

Model2N3904 TIN/LEAD

Contact

Quantity

Secure Checkout

Quality Engagement

Easy change and return

Delivery Available

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 200 mV