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Unit Weight: 206 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 625 mW
DC Current Gain hFE Max: 160
Gain Bandwidth Product fT: 350 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 30 V
Continuous Collector Current: 200 mA
Maximum DC Collector Current: 200 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 40
Collector- Emitter Voltage VCEO Max: 15 V
Collector-Emitter Saturation Voltage: 350 mV
