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Central Semiconductor 2N4300 TIN/LEAD BJTs - Bipolar Transistors NPN 100Vcbo 80Vceo 6.0Vebo 1.0mA

Name: Central Semiconductor 2N4300 TIN/LEAD BJTs - Bipolar Transistors NPN 100Vcbo 80Vceo 6.0Vebo 1.0mA
Brand: Central Semiconductor

Model2N4300 TIN/LEAD

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 120

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 300 mV