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Central Semiconductor 2N5401 TRA PBFREE BJTs - Bipolar Transistors PNP 160Vcbo 150Vceo 5.0Vebo 600mA 625mW

Name: Central Semiconductor 2N5401 TRA PBFREE BJTs - Bipolar Transistors PNP 160Vcbo 150Vceo 5.0Vebo 600mA 625mW
Brand: Central Semiconductor

Model2N5401 TRA PBFREE

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1.5 W

DC Current Gain hFE Max: 240 at 5 V, 10 mA

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 160 V

Continuous Collector Current: 600 mA

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40 at 10 V, 1 mA

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 500 mV