Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts

Central Semiconductor 2N5429 TIN/LEAD BJTs - Bipolar Transistors NPN 100Vcbo 100Vceo 7.0A 40W 0.7Vce

Name: Central Semiconductor 2N5429 TIN/LEAD BJTs - Bipolar Transistors NPN 100Vcbo 100Vceo 7.0A 40W 0.7Vce
Brand: Central Semiconductor

Model2N5429 TIN/LEAD

Contact

Quantity

Secure Checkout

Quality Engagement

Easy change and return

Delivery Available

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 40 W

DC Current Gain hFE Max: 120

Gain Bandwidth Product fT: 30 MHz

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 7 A

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 700 mV