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Central Semiconductor 2N706A TIN/LEAD BJTs - Bipolar Transistors PNP 60Vcbo 60Vceo 5.0Vebo 8.0pF

Name: Central Semiconductor 2N706A TIN/LEAD BJTs - Bipolar Transistors PNP 60Vcbo 60Vceo 5.0Vebo 8.0pF
Brand: Central Semiconductor

Model2N706A TIN/LEAD

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 60

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 300 mV