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Central Semiconductor GES6016 PBFREE BJTs - Bipolar Transistors NPN 70Vcbo 70Vces 60Vces 5.0Vebo 625mW

Name: Central Semiconductor GES6016 PBFREE BJTs - Bipolar Transistors NPN 70Vcbo 70Vces 60Vces 5.0Vebo 625mW
Brand: Central Semiconductor

ModelGES6016 PBFREE

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Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

Gain Bandwidth Product fT: 425 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 70 V

Maximum DC Collector Current: 800 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 500 mV