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Central Semiconductor MJE2801T PBFREE BJTs - Bipolar Transistors LEADED POWER TRANSIS GEN PUR T0-220

Name: Central Semiconductor MJE2801T PBFREE BJTs - Bipolar Transistors LEADED POWER TRANSIS GEN PUR T0-220
Brand: Central Semiconductor

ModelMJE2801T PBFREE

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Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 75 W

DC Current Gain hFE Max: 100 at 3 A

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 25 at 3 A

Collector- Emitter Voltage VCEO Max: 60 V