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Technology: Si
Unit Weight: 8.372 g
Configuration: Quad
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1.9 W
DC Current Gain hFE Max: 300
Gain Bandwidth Product fT: 200 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 75 V
Continuous Collector Current: 500 mA
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 100
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 1 V
