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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1.5 W
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 4 V
Collector- Base Voltage VCBO: 40 V
Continuous Collector Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 30 at 1 V, 1 A
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 600 mV
