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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 625 mW
DC Current Gain hFE Max: 400 at 5 mA, 10 V
Gain Bandwidth Product fT: 125 MHz
Emitter- Base Voltage VEBO: 4 V
Continuous Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 40 at 5 mA, 10 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 250 mV
