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Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 625 mW
Gain Bandwidth Product fT: 125 MHz
Emitter- Base Voltage VEBO: 12 V
Collector- Base Voltage VCBO: 80 V
Continuous Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 10000 at 10 mA, 5 V
Maximum Collector Cut-off Current: 100 nA
Collector- Emitter Voltage VCEO Max: 80 V
