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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 1.5 W
Gain Bandwidth Product fT: 450 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 30 V
Continuous Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 100 at 100 uA, 1 V
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 130 mV
