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Technology: Si
Unit Weight: 330 mg
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 10 W
DC Current Gain hFE Max: 270 at - 500 mA, - 3 V
Gain Bandwidth Product fT: 110 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 40 V
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 120
Collector- Emitter Voltage VCEO Max: 32 V
Collector-Emitter Saturation Voltage: 800 mV
