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Width: 1.35 mm
Height: 1 mm
Length: 2.2 mm
Technology: Si
Unit Weight: 7.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 P-Channel
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 300 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 10 ns
Typical Turn-Off Delay Time: 18 ns
Id - Continuous Drain Current: 130 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.05 S
Rds On - Drain-Source Resistance: 10 Ohms
Vds - Drain-Source Breakdown Voltage: 50 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
