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Fall Time: 21.9 ns, 28.1 ns
Rise Time: 5.7 ns, 7.2 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 30.4 nC, 19 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 25 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V, - 12 V, + 12 V
Typical Turn-On Delay Time: 6.6 ns, 5.8 ns
Typical Turn-Off Delay Time: 41.5 ns, 28.1 ns
Id - Continuous Drain Current: 31.3 A, 20.9 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 17 mOhms, 53 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 800 mV, 850 mV
