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Fall Time: 3.7 ns, 12.7 ns
Rise Time: 9.4 ns, 3.6 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 18.5 nC, 11.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 800 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 4.6 ns, 3.5 ns
Typical Turn-Off Delay Time: 15.7 ns, 20.8 ns
Id - Continuous Drain Current: 6.1 A, 3.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 25 mOhms, 80 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
