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Technology: Si
Unit Weight: 6.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 19.6 nC, 10.7 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2.2 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Id - Continuous Drain Current: 5.6 A, 3.8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 29 mOhms, 61 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 400 mV, 1 V
