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Fall Time: 12.33 ns, 42.4 ns
Rise Time: 12.49 ns, 12.4 ns
Technology: Si
Unit Weight: 74 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 11.6 nC, 8 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.8 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 11.67 ns, 16.8 ns
Typical Turn-Off Delay Time: 35.89 ns, 94.1 ns
Id - Continuous Drain Current: 8.5 A, 6.8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 20 mOhms, 33 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 500 mV, 400 mV
