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Fall Time: 8 ns, 13 ns
Rise Time: 8 ns, 12 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 12 nC, 14 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.1 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 5 ns, 11 ns
Typical Turn-Off Delay Time: 25 ns, 21 ns
Id - Continuous Drain Current: 4.5 A, 3.1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 35 mOhms, 74 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 400 mV
