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Technology: Si
Unit Weight: 15 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 736.6 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.12 W
Vgs - Gate-Source Voltage: - 6 V, + 6 V
Id - Continuous Drain Current: 1.34 A, 1.14 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 700 mOhms, 1.3 Ohms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
